this is preliminary information on a new product now in development or undergoing evaluation. details are subject to change without notice. april 2012 doc id 17443 rev 2 1/14 14 STL42N65M5 n-channel 650 v, 0.070 , 34 a mdmesh? v power mosfet in powerflat? 8x8 hv package datasheet ? preliminary data features 100% avalanche tested low input capacitance and gate charge low gate input resistance applications switching applications description this device is an n-channel mdmesh? v power mosfet based on an innovative proprietary vertical process technology, which is combined with stmicroelectronics? well-known powermesh? horizontal layout structure. the resulting product has extremely low on- resistance, which is unmatched among silicon- based power mosfets, making it especially suitable for applications which require superior power density and outstanding efficiency. figure 1. internal schematic diagram order code v dss @ t jmax r ds(on) max i d STL42N65M5 710 v < 0.079 34 a (1) 1. the value is rated according to r thj-case 3 3 3 ' $ 0 o w e r & |